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参数资料
| 型号： | WED9LAPC2C16V8BC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA192 |
| 封装： | 21 X 21 MM, BGA-192 |
| 文件页数： | 14/24页 |
| 文件大小： | 933K |
| 代理商： | WED9LAPC2C16V8BC |
21
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED9LAPC2C16V8BC
July, 2000
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specications without notice.
FIG. 14 SDRAM BURST READ SINGLE BIT WRITE CYCLE @ BURST LENGTH = 2
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
GCK
VCRAS#
VCCAS#
VCADDR
VCBS
VCADDR9/AP
VCDATA
VCWE#
VCDQM#
CL = 2
CL = 3
Row Active
(A-Bank)
Row Active
(B-Bank)
Row Active
(A-Bank)
Write
(A-Bank)
Read
(A-Bank)
Write with
Auto Precharge
(B-Bank)
Read with
Auto Precharge
(A-Bank)
Precharge
(Both Banks)
DON’T CARE
Note 2
RAa
CAa
CBc
CAd
RAc
RAa
DAa0
RBb
CAb
DBc0
RAc
QAd0
QAd1
QAd0
QAd1
DAa0
RBb
QAb0
QAb1
QAb0
QAb1
Notes:
1.
BRSW modes enabled by setting A9 “High” at MRS (Mode Register Set).
At the BRSW Mode, the burst length at Write is xed to “1” regardless of programmed burst length.
2.
When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the burst-end cycle, so in
the case of BRSW write command, the next cycle starts the precharge.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WED9LAPC2C16V8BI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LAPC3C16V8BC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LAPC3C16V8BI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LC6416V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
| WED9LC6416V1310BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
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