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| 型号： | ZXM66P02N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN 20V 8SOIC |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2068pF @ 15V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
A Product Line of
Diodes Incorporated
ZXM66P02N8
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
(Note 3)
Symbol
V DSS
V GS
Value
-20
± 12
-8.0
Unit
V
V
Continuous Drain current
V GS = 4.5V
T A = 70°C (Note 3)
I D
-6.5
A
(Note 2)
-6.4
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 3)
(Note 4)
I DM
I S
I SM
-28
-4.15
-28
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
(Note 2)
(Note 3)
(Note 2)
(Note 3)
P D
R θ JA
T J , T STG
1.56
12.5
2.5
20
80
50
-55 to 150
W
mW/ ° C
° C/W
° C
Notes:
2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
3. Same as note (3), except the device is measured at t ≤ 10 sec.
4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 μ s – pulse width limited by maximum junction temperature.
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1
-100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -16V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-0.7
?
?
?
?
?
?
13.3
?
23.1
12.2
?
0.025
0.045
?
0.95
?
?
V
?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -4.5V, I D = -3.2A
V GS = -2.5V, I D = -2.7A
V DS = -10V, I D = -3.2A
I S = -3.2A, V GS = 0V
I F = -3.2A, di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS ( Note 6 )
Input Capacitance
C iss
?
2068
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
1038
506
43.3
3.5
21.3
14.0
44.3
118.4
98.4
?
?
?
?
?
?
?
?
?
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V
F = 1MHz
V GS = -4.5V, V DS = -10V,
I D = -3.2A
V DD = -10V, V GS = -5V
I D = -3.2A, R G = 6.0 Ω
Notes:
5. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
2 of 5
www.diodes.com
October 2009
? Diodes Incorporated
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