- 您现在的位置：买卖IC网 > Datasheet目录539 > ZXM66P03N8TA (Diodes Inc)MOSFET P-CH 30V 7.9A 8-SOIC Datasheet资料下载
参数资料
| 型号： | ZXM66P03N8TA |
| 厂商： | Diodes Inc |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 7.9A 8-SOIC |
| 产品目录绘图： | SO-8 |
| 其它图纸： | SO-8 Single Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 5.6A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 36nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1979pF @ 25V |
| 功率 - 最大： | 1.56W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | ZXM66P03N8DKR |
ZXM66P03N8
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
-30
-1.0
-1
-100
V
μ A
nA
V
I D =-250 μ A, V GS =0V
V DS =-24V, V GS =0V
V GS = ± 20V, V DS =0V
I D =-250 μ A, V DS =
V GS
Static Drain-Source On-State
Resistance (1)
R DS(on)
0.025 ?
0.035 ?
V GS =-10V, I D =-5.6A
V GS =-4.5V, I D =-2.8A
Forward Transconductance (1)(3)
g fs
14.4
S
V DS =-15V,I D =-5.6A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
1979
743
279
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
7.6
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
tr
t d(off)
tf
Qg
Qg
Q gs
Q gd
16.3
94.6
39.6
36
62.5
4.9
19.6
ns
ns
ns
nC
nC
nC
nC
V DD =-15V, I D =-5.6A
R G =6.2 ? , V GS =-10V
V DS =-15V,V GS =-5V
I D =-5.6A
V DS =-15V,V GS =-10V
I D =-5.6A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.95 V
T j =25°C, I S =-5.6A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
35
39.9
ns
nC
T j =25°C, I F =-5.6A,
di/dt= 100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JANUARY 2006
3
SEMICONDUCTORS
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMC10A816N8TC | MOSFET DUAL COMPL 100V 8-SOIC |
| ZXMC3A16DN8TA | MOSFET N+P 30V 5.4A 8SOIC |
| ZXMC3A17DN8TC | MOSFET N/P-CHAN DUAL 30V 8SOIC |
| ZXMC3A18DN8TA | MOSFET N-CH/P-CH 30V 8-SOIC |
| ZXMC3AM832TA | MOSFET N+P 30V 2.7A 8MLP 3 X 2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM66P03N8TC | 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMC10A816DN8TC | 制造商:Diodes Incorporated 功能描述: |
| ZXMC10A816N8 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:100V SO8 Complementary Dual enhancement mode MOSFET |
| ZXMC10A816N8TA | 制造商:Diodes Incorporated 功能描述:MOSFET COMPLEMENTARY SOP-8L ROHS 0.5K - Tape and Reel |
| ZXMC10A816N8TC | 功能描述:MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。