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参数资料
| 型号： | ZXMHC6A07N8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 11/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL H-BRIDGE 60V 8-SOIC |
| 标准包装： | 1 |
| FET 型： | 2 个 N 通道和 2 个 P 通道（H 桥式） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.39A，1.28A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 1.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 166pF @ 40V |
| 功率 - 最大： | 870mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMHC6A07N8DIDKR |
ZXMHC6A07N8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or
other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume
any liability arising out of the application or use of this document or any product described herein; neither does Diodes
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes
Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all
damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers
shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product
names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related
requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices
or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes
Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages
arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright ? 2009, Diodes Incorporated
www.diodes.com
Issue 1.0 - March 2009
? Diodes Incorporated
11
www.diodes.com
相关PDF资料 |
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| ZXMHC6A07T8TA | MOSFET H-BRIDGE N/P-CH 60V SM8 |
| ZXMHN6A07T8TA | MOSFET N-CHAN 60V 1.6A SOT223-8 |
| ZXMN0545G4TA | MOSFET N-CH 450V 140MA SOT-223 |
| ZXMN10A07FTC | MOSFET N-CHAN 100V SOT23-3 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMHC6A07T8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC6A07T8(1) | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| ZXMHC6A07T8(2) | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| ZXMHC6A07T8_05 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC6A07T8TA | 功能描述:MOSFET 60V UMOS H-Bridge RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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