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| 型号： | ZXMN6A07FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 60V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 1.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 166pF @ 40V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
A Product Line of
Diodes ? Incorporated
ZXMN6A07F
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
1
±100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Notes 10 and 12)
Diode Forward Voltage (Note 10)
Reverse Recovery Time (Note 12)
Reverse Recovery Charge (Note 12)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
?
?
2.3
0.8
20.5
21.3
3.0
0.250
0.350
?
0.95
?
?
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = -1.8A
V GS = 4.5V, I D = -1.3A
V DS = 15V, I D = 1.8A
T J = +25°C, I S = 0.45A, V GS = 0V
T J = +25°C, I F = 1.8A,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
Q g
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
?
166
19.5
8.7
1.8
1.4
4.9
2.0
1.65
3.2
0.67
0.82
?
?
?
?
?
?
?
?
?
?
?
pF
ns
nC
nC
V DD = 40V, V GS = 0V
f = 1.0MHz
V DD = 30V, I D = 1.8A,
R G ? 6.0 Ω, V GS = 10V
V DS = 30V, V GS = 5V,
I D = 1.8A
V DS = 30V, V GS = 10V,
I D = 1.8A
Notes:
10. Measured under pulsed conditions. Pulse width = 300 μ s. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.
ZXMN6A07F
Document Number DS33547 Rev. 7 - 2
4 of 8
www.diodes.com
October 2012
? Diodes Incorporated
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