参数资料
型号: ZXMN6A09GTA
厂商: Diodes Inc
文件页数: 4/8页
文件大小: 0K
描述: MOSFET N-CH 60V 6.9A SOT223
其它图纸: SOT-223
SOT-223 Footprint
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 5.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 8.2A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 24.2nC @ 5V
输入电容 (Ciss) @ Vds: 1407pF @ 40V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 标准包装
产品目录页面: 1473 (CN2011-ZH PDF)
其它名称: ZXMN6A09GDKR
ZXMN6A09G
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Static
Drain-source breakdown voltage V (BR)DSS
60
V
I D = 250 A, V GS =0V
Zero gate voltage drain current
Gate-body leakage
I DSS
I GSS
1
100
A
nA
V DS = 60V, V GS =0V
V GS =±20V, V DS =0V
Gate-source threshold voltage
Static drain-source on-state
V GS(th)
R DS(on)
1.0
3.0
0.040
V
I D = 250 A, V DS =V GS
V GS = 10V, I D = 8.2A
resistance (*)
0.060
V GS = 4.5V, I D = 7.4A
Forward transconductance (*)(?)
g fs
15
S
V DS = 15V, I D = 8.2A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1407
121
59
pF
pF
pF
V DS = 40V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
t d(on)
t r
t d(off)
t f
Q g
4.9
5.0
25.3
4.6
12.4
ns
ns
ns
ns
nC
V DD = 15V, I D = 3.5A
R G ? 6.0 , V GS = 10V
V DS = 15V, V GS = 5V
I D = 3.5A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
24.2
5.2
3.5
nC
nC
nC
V DS = 15V, V GS = 5V
I D = 3.5A
Source-drain diode
Diode forward voltage (*)
V SD
0.85
0.95
V
T j =25°C, I S = 6.6A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
26.3
26.6
ns
nC
T j =25°C, I S = 3.5A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 3 - June 2007
? Zetex Semiconductors plc 2007
4
www.zetex.com
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