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| 型号： | 2N7002E-7-F |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 240MA SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Copper Bond Wire Change 3/May/2011 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 240mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 250mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
2N7002E
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ? 1.0M ?
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage
Continuous
Pulsed
V GSS
±20
±40
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I S
I DM
250
200
300
240
500
800
mA
mA
mA
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
P D
R θ JA
R θ JC
T J, T STG
370
540
348
241
91
-55 to 150
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
60
70
?
V
V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
@ T C = +125°C
I DSS
I GSS
?
?
?
?
1.0
500
±10
μA
nA
V DS = 60V, V GS = 0V
V GS = ±15V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
1.0
?
2.5
V
V DS = V GS , I D = 250μA
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
@ T J = +25°C
R DS (ON)
I D(ON)
g FS
?
?
0.8
80
1.6
2.0
1.0
?
3
4
?
?
?
A
mS
V GS = 10V, I D = 250mA
V GS = 4.5V, I D = 200mA
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C iss
?
22
50
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
C oss
C rss
R g
Q g
Q gs
Q gd
?
?
??
??
??
??
11
2.0
120
223
82
178
25
5.0
?
?
?
?
pF
pF
?
pC
pC
pC
V DS = 25V, V GS = 0V, f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = 10V, I D = 250mA
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
7.0
11
20
20
ns
ns
V DD = 30V, I D = 0.2A,
R L = 150 ? , V GEN = 10V, R GEN = 25 ?
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002E
Document number: DS30376 Rev. 14 - 2
2 of 5
www.diodes.com
August 2013
? Diodes Incorporated
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相关代理商/技术参数 |
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| 2N7002E8/10K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E9/3K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
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