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参数资料
| 型号： | 2N7633M2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 60 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HERMETIC SEALED, FLAT PACK-14 |
| 文件页数： | 1/16页 |
| 文件大小： | 316K |
| 代理商： | 2N7633M2 |
Absolute Maximum Ratings (Per Die)
Parameter
N-Channel
P-Channel
Units
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
0.8
-0.56
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
0.5
-0.35
IDM
Pulsed Drain Current
3.2
-2.24
PD @ TC = 25°C
Max. Power Dissipation
0.6
W
Linear Derating Factor
0.005
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
16
26
mJ
IAR
Avalanche Current
0.8
-0.56
A
EAR
Repetitive Avalanche Energy
0.06
mJ
dv/dt
Peak Diode Recovery dv/dt
10.2
-5.79
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.63 in./1.6 mm from case for 10s)
Weight
0.52 (Typical)
g
Pre-Irradiation
oC
A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (14-LEAD FLAT PACK)
03/17/08
www.irf.com
1
For footnotes refer to the last page
IRHLA7670Z4
60V, Combination 2N-2P-CHANNEL
TECHNOLOGY
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n Light Weight
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
2N7633M2
14-Lead Flat Pack
PD-97251
Product Summary
Part Number
Radiation Level
RDS(on)
ID
CHANNEL
0.60
0.8A
N
1.36
-0.56A
P
0.60
0.8A
N
1.36
-0.56A
P
IRHLA7670Z4
IRHLA7630Z4
100K Rads (Si)
300K Rads (Si)
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相关代理商/技术参数 |
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| 2N7638 | 制造商:Motorola 功能描述:2N7638 TO92 MOT N9H1C |
| 2N7638-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 8A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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