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参数资料
型号： 2N7633M2
元件分类： 小信号晶体管
英文描述： 800 mA, 60 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装： HERMETIC SEALED, FLAT PACK-14
文件页数： 10/16页
文件大小： 316K
代理商： 2N7633M2
www.irf.com
3
Pre-Irradiation
IRHLA7670Z4, 2N7633M2
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
-0.56
ISM
Pulse Source Current (Body Diode)
—
-2.24
VSD Diode Forward Voltage
—
-5.0
V
Tj = 25°C, IS = -0.56A, VGS = 0V
trr
Reverse Recovery Time
—
35
ns
Tj = 25°C, IF = -0.56A, di/dt ≤ -100A/s
QRR Reverse Recovery Charge
—
9.6
nC
VDD ≤ -25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
RthJA
Junction-to-Ambient
—
210
Typical socket mount
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-60
—
V
VGS = 0V, ID = -250A
BVDSS/TJ Temperature Coefficient of Breakdown —
-0.063 —
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
1.36
VGS = -4.5V, ID = -0.35A
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
-2.0
V
VDS = VGS, ID = -250A
VGS(th)/TJ Gate Threshold Voltage Coefficient
—
3.2
—
mV/°C
gfs
Forward Transconductance
0.7
—
S
VDS = -10V, IDS = -0.35A
IDSS
Zero Gate Voltage Drain Current
—
-1.0
VDS = -48V ,VGS = 0V
—
-10
VDS = -48V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
—
-100
VGS = -10V
IGSS
Gate-to-Source Leakage Reverse
—
100
VGS = 10V
Qg
Total Gate Charge
—
2.8
VGS = -4.5V, ID = -0.56A
Qgs
Gate-to-Source Charge
—
1.7
nC
VDS = -30V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
1.2
td(on)
Turn-On Delay Time
—
22
VDD = -30V, ID = -0.56A,
tr
Rise Time
—
22
VGS = -5.0V, RG = 24
td(off)
Turn-Off Delay Time
—
40
tf
Fall Time
—
32
LS + LD
Total Inductance
—
20
—
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
Ciss
Input Capacitance
—
144
—
VGS = 0V, VDS = -25V
Coss
Output Capacitance
—
41
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
6.6
—
nA
nH
ns
A
Rg
Gate Resistance
—
55
—
f = 1.0MHz, open drain
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