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参数资料
| 型号： | 2N7633M2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 60 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HERMETIC SEALED, FLAT PACK-14 |
| 文件页数： | 8/16页 |
| 文件大小： | 316K |
| 代理商： | 2N7633M2 |
IRHLA7670Z4, 2N7633M2
Pre-Irradiation
16
www.irf.com
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
VDD = -25V, starting TJ = 25°C, L= 166mH,
Peak IL = -0.56A, VGS = -10V
ISD ≤ -0.56A, di/dt ≤ -161A/s,
VDD ≤ -60V, TJ ≤ 150°C
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 50mH,
Peak IL = 0.8A, VGS = 10V
ISD ≤ 0.8A, di/dt ≤ 230A/s,
VDD ≤ 60V, TJ ≤ 150°C
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2008
±
Case Outline and Dimensions — 14 Lead FlatPack
LEAD ASSIGNMENT
LEGEND
D = DRAIN, S = SOURCE , G = GATE, NC = NO CONNECTION
CHANNELS
N Channel = Q1 and Q3, P Channel = Q2 and Q4
D4
S4
G4
NC
S3
Q1
Q4
Q2
Q3
G3
D3
D1
S1
G1
D2
S2
G2
NC
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