参数资料
型号: 2N7633M2
元件分类: 小信号晶体管
英文描述: 800 mA, 60 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: HERMETIC SEALED, FLAT PACK-14
文件页数: 11/16页
文件大小: 316K
代理商: 2N7633M2
IRHLA7670Z4, 2N7633M2
Pre-Irradiation
4
www.irf.com
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Radiation Characteristics
Fig a. Typical Single Event Effect, Safe Operating Area
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 300K Rads (Si)1
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
60
V
VGS = 0V, ID = 250A
VGS(th)
Gate Threshold Voltage
1.0
2.0
VGS = VDS, ID = 250A
IGSS
Gate-to-Source Leakage Forward
100
nA
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -10V
IDSS
Zero Gate Voltage Drain Current
1.0
A
VDS= 48V, VGS= 0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
0.60
VGS = 4.5V, ID = 0.5A
RDS(on)
Static Drain-to-Source On-state
VSD
Diode Forward Voltage
1.2
V
VGS = 0V, ID = 0.8A
Resistance (14-Lead Flat Pack)
0.60
VGS = 4.5V, ID = 0.5A
1. Part numbers IRHLA7670Z4, IRHLA7630Z4
0
10
20
30
40
50
60
70
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
VGS
VD
S
Br
I
Au
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm
2))
(MeV)
(m)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-2V
-4V
-5V
-6V
-7V
-8V
-10V
Br
37
305
39
60
35
30
20
I
60
370
34
60
20
15
-
Au
84
390
30
60
-
相关PDF资料
PDF描述
2N911 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N718 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N2586 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N2221 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N706A 50 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
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