参数资料
型号: 4450HG/3-K
厂商: EXAR CORP
元件分类: 微控制器/微处理器
英文描述: MICROPROCESSOR, PBGA324
封装: ROHS COMPLIANT, HSBGA-324
文件页数: 76/92页
文件大小: 780K
代理商: 4450HG/3-K
4450 – Data Sheet, DS-0131-06
Page 78
Hifn Confidential
8.11 Flash Device Timing
The 4450 supports both reading and writing of SPI type Flash devices, up to a tbd MHz
clock rate. The Flash device interface signal timing is derived from an internal CPU toggling
GPIO pins. Additional details regarding the SPI interface via the esc_gpio[4:0] pins is
described in Section 6.7.
Table 8-12 and Figure 8-10 describe the read and write timing.
Figure 8-10. Flash device read and write timing (SPI mode 0)
Tac
DQ access time from CK
-700
700
ps
Tdqsck
DQS access time from CK
-600
600
ps
Note
WL is the write latency of the DDR2 DRAM (in clock cycles). The Tdqss parameter indicates that the
edge of the DQS signal must be no more than +/- 0.25 of a clock period away from the appropriate
clock edge.
Table 8-12. Flash Device read and write Timing
Symbol
Parameter
Min
Max
Units
Twh
Clock high period
22
ns
Twl
Clock low period
22
ns
Tcs
CS high period
250
ns
Tcss
CS (setup) to Clock
250
ns
Tcsh
Clock to CS (hold)
250
ns
Tv
Read data valid
20
ns
Tho
Read data hold
0
ns
Tdis
Read data hi-Z
20
ns
Tsu
Write data set up
5
ns
Th
Write data hold
10
ns
Table 8-11. SDRAM Interface Timing
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