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参数资料
| 型号： | 70T3399S133BCGI8 |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 18 DUAL-PORT SRAM, 15 ns, PBGA256 |
| 封装： | 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 |
| 文件页数： | 2/28页 |
| 文件大小： | 327K |
| 代理商： | 70T3399S133BCGI8 |
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6.42
IDT70T3339/19/99S
High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
10
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (3)(VDD = 2.5V ± 100mV)
70T3339/19/99
S200
Com'l Only(8)
70T3339/19/99
S166
Com'l
& Ind(7)
70T3339/19/99
S133
Com'l
& Ind
Symbol
Parameter
Test Condition
Version
Typ.(4)
Max.
Typ.(4)
Max.
Typ.(4)
Max.
Unit
IDD
Dynamic Operating
Current (Both
Ports Active)
CEL and CER= VIL,
Outputs Disabled,
f = fMAX(1)
COM'L
S
375
525
320
450
260
370
mA
IND
S
___
320
510
260
450
ISB1(6)
Standby Current
(Both Ports - TTL
Level Inputs)
CEL = CER = VIH
f = fMAX(1)
COM'L
S
205
270
175
230
140
190
mA
IND
S
___
175
275
140
235
ISB2(6)
Standby Current
(One Port - TTL
Level Inputs)
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX(1)
COM'L
S
300
375
250
325
200
250
mA
IND
S
___
250
365
200
310
ISB3
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports
CEL and
CER > VDDQ - 0.2V, VIN > VDDQ - 0.2V
or VIN < 0.2V, f = 0(2)
COM'L
S
5
15
5
15
5
15
mA
IND
S
___
5
20520
ISB4(6)
Full Standby Current
(One Port - CMOS
Level Inputs)
CE"A" < 0.2V and CE"B" > VDDQ - 0.2V(5)
VIN > VDDQ - 0.2V or VIN < 0.2V
Active Port, Outputs Disabled, f = fMAX(1)
COM'L
S
300
375
250
325
200
250
mA
IND
S
___
250
365
200
310
Izz
Sleep Mode Current
(Both Ports - TTL
Level Inputs)
ZZL = ZZR = VIH
f=fMAX(1)
COM'L
S
5
15
5
15
5
15
mA
IND
S
___
5
20520
5652 tbl 09
NOTES:
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS".
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. VDD = 2.5V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 15mA (Typ).
5.
CEX = VIL means CE0X = VIL and CE1X = VIH
CEX = VIH means CE0X = VIH or CE1X = VIL
CEX < 0.2V means CE0X < 0.2V and CE1X > VDD - 0.2V
CEX > VDD - 0.2V means CE0X > VDD - 0.2V or CE1X - 0.2V
"X" represents "L" for left port or "R" for right port.
6. ISB1, ISB2 and ISB4 will all reach full standby levels (ISB3) on the appropriate port(s) if ZZL and/or ZZR = VIH.
7. 166MHz I-Temp is not available in the BF-208 package.
8. 200Mhz is not available in the BF-208 and DD-144 packages.
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| 70T3399S133BCI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 256-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 256BGA - Rail/Tube |
| 70T3399S133BCI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 256BGA - Tape and Reel |
| 70T3399S133BF | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 208-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 208FPBGA - Rail/Tube |
| 70T3399S133BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 208FPBGA - Tape and Reel |
| 70T3399S133BFI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 208-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 208FPBGA - Rail/Tube |
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