参数资料
型号: 70T3399S133BCGI8
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: SRAM
英文描述: 128K X 18 DUAL-PORT SRAM, 15 ns, PBGA256
封装: 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
文件页数: 28/28页
文件大小: 327K
代理商: 70T3399S133BCGI8
6.42
IDT70T3339/19/99S
High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
9
Absolute Maximum Ratings(1)
Symbol
Rating
Commercial
& Industrial
Unit
VTERM
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to 3.6
V
VTERM(2)
(VDDQ)
VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3)
Temperature Under Bias
-55 to +125
oC
TSTG
Storage Temperature
-65 to +150
oC
TJN
Junction Temperature
+150
oC
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
5652 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed VDDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD= 2.5V ± 100mV)
Symbol
Parameter
Test Conditions
70T3339/19/99S
Unit
Min.
Max.
|ILI|
Input Leakage Current(1)
VDDQ = Max., VIN = 0V to VDDQ
___
10
A
|ILI|
JTAG & ZZ Input Leakage Current(1,2)
VDD = Max., VIN = 0V to VDD
___
±30
A
|ILO|
Output Leakage Current
(1,3)
CE0 = VIH or CE1 = VIL, VOUT = 0V to VDDQ
___
10
A
VOL (3.3V)
Output Low Voltage
(1)
IOL = +4mA, VDDQ = Min.
___
0.4
V
VOH (3.3V)
Output High Voltage
(1)
IOH = -4mA, VDDQ = Min.
2.4
___
V
VOL (2.5V)
Output Low Voltage
(1)
IOL = +2mA, VDDQ = Min.
___
0.4
V
VOH (2.5V)
Output High Voltage
(1)
IOH = -2mA, VDDQ = Min.
2.0
___
V
5652 tbl 08
NOTES:
1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.6 for details.
2. Applicable only for TMS, TDI and
TRST inputs.
3. Outputs tested in tri-state mode.
Capacitance(1)
(TA = +25°C, f = 1.0MHz) PQFP ONLY
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
8
pF
COUT(3)
Output Capacitance
VOUT = 3dV
10.5
pF
5652 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
相关PDF资料
PDF描述
70TPS12 75 A, 1200 V, SCR, TO-274AA
70TPS16 75 A, 1600 V, SCR, TO-274AA
70TPS12PBF 75 A, 1200 V, SCR, TO-274AA
70TPS16PBF 75 A, 1600 V, SCR, TO-274AA
70V657S12BFG8 32K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
相关代理商/技术参数
参数描述
70T3399S133BCI 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 256-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 256BGA - Rail/Tube
70T3399S133BCI8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 256BGA - Tape and Reel
70T3399S133BF 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 208-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 208FPBGA - Rail/Tube
70T3399S133BF8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 208FPBGA - Tape and Reel
70T3399S133BFI 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 15ns/4.2ns 208-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 15NS/4.2NS 208FPBGA - Rail/Tube