收藏本站
参数资料
型号： 71V25781YSA166BGI
厂商： INTEGRATED DEVICE TECHNOLOGY INC
元件分类： SRAM
英文描述： 256K X 18 CACHE SRAM, 3.5 ns, PBGA119
封装： BGA-119
文件页数： 1/22页
文件大小： 627K
代理商： 71V25781YSA166BGI
MARCH
2009
DSC-5297/03
1
2000 Integrated Device Technology, Inc.
Features
◆
◆ 128K x 36, 256K x 18 memory configurations
◆
◆ Supports high system speed:
Commercial:
– 200MHz 3.1ns clock access time
Commercial and Industrial:
– 183MHz 3.3ns clock access time
– 166MHz 3.5ns clock access time
◆
LBO input selects interleaved or linear burst mode
◆
◆ Self-timed write cycle with global write control (
GW),bytewrite
enable (
BWE), and byte writes (BWx)
◆
◆ 3.3V core power supply
◆
◆ Power down controlled by ZZ input
◆
◆ 2.5V I/O
◆
◆ Optional - Boundary Scan JTAG Interface (IEEE 1149.1
Compliant)
◆
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball
grid array
Description
The IDT71V25761/781 are high-speed SRAMs organized as 128K
x 36/256K x 18. The IDT71V25761/781 SRAMs contain write, data,
addressandcontrolregisters. InternallogicallowstheSRAMtogenerate
a self-timed write based upon a decision which can be left until the end of
the write cycle.
The burst mode feature offers the highest level of performance to the
systemdesigner,astheIDT71V25761/718canprovidefourcyclesofdata
for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will be pipelined for one
cycle before it is available on the next rising clock edge. If burst mode
operationisselected(
ADV=LOW),thesubsequentthreecyclesofoutput
data will be available to the user on the next three rising clock edges. The
order of these three addresses are defined by the internal burst counter
and the
LBO input pin.
The IDT71V25761/781 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA).
Pin Description Summary
NOTE:
1.
BW3 and BW4 are not applicable for the IDT71V25781.
A0-A17
Address Inputs
Input
Synchronous
CE
Chip Enable
Input
Synchronous
CS0,
CS1
Chip Selects
Input
Synchronous
OE
Output Enable
Input
Asynchronous
GW
Global Write Enable
Input
Synchronous
BWE
Byte Write Enable
Input
Synchronous
BW1, BW2, BW3, BW4(1)
Individual Byte Write Selects
Input
Synchronous
CLK
Clock
Input
N/A
ADV
Burst Address Advance
Input
Synchronous
ADSC
Address Status (Cache Controller)
Input
Synchronous
ADSP
Address Status (Processor)
Input
Synchronous
LBO
Linear / Interleaved Burst Order
Input
DC
TMS
Test Mode Select
Input
Synchronous
TDI
Test Data Input
Input
Synchronous
TCK
Test Clock
Input
N/A
TDO
Test Data Output
Output
Synchronous
TRST
JTAG Reset (Optional)
Input
Asynchronous
ZZ
Sleep Mode
Input
Asynchronous
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
I/O
Synchronous
VDD, VDDQ
Core Power, I/O Power
Supply
N/A
VSS
Ground
Supply
N/A
5297 tbl 01
128K X 36, 256K X 18
3.3V Synchronous SRAMs
2.5V I/O, Pipelined Outputs,
Burst Counter, Single Cycle Deselect
IDT71V25761S
IDT71V25781S
IDT71V25761SA
IDT71V25781SA
相关PDF资料
PDF描述
71V35761YSA183BGI8 128K X 36 CACHE SRAM, 3.3 ns, PBGA119
71V35781S183PF 256K X 18 CACHE SRAM, 3.3 ns, PQFP100
7201LA20JGI 512 X 9 OTHER FIFO, 20 ns, PQCC32
72031-111LF 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
72031-111 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT
相关代理商/技术参数
参数描述
71V30L25TF 功能描述:静态随机存取存储器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
71V30L25TF8 功能描述:静态随机存取存储器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
71V30L25TFG 功能描述:静态随机存取存储器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
71V30L25TFG8 功能描述:静态随机存取存储器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
71V30L25TFGI 制造商:Integrated Device Technology Inc 功能描述:1KX8 LOW POWER 8K 3.3V DUAL PORT RAM - Bulk
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*