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参数资料
| 型号： | A28F200BR-T |
| 厂商： | Intel Corp. |
| 英文描述： | 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) |
| 中文描述： | 2兆位（128K的× 16）引导块闪存（2兆位（128K的× 16）引导块闪速存储器） |
| 文件页数： | 23/36页 |
| 文件大小： | 440K |
| 代理商： | A28F200BR-T |
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4.0
A28F200BR
23
ADVANCE INFORMATION
ABSOLUTE MAXIMUM
RATINGS*
Operating Temperature
During Read...........................
-40°C to +125°C
During Block Erase
and Word/Byte Program......... -40°C to +125°C
Temperature Under Bias ........ -40°C to +125°C
Storage Temperature.................... -65°C to +125°C
Voltage on Any Pin
(except V
CC
, V
PP
, A
9
and RP#)
with Respect to GND..............-2.0V to +7.0V
(1)
Voltage on Pin RP# or Pin A
9
with Respect to GND..........-2.0V to +13.5V
(1,2)
V
PP
Program Voltage with Respect
to GND during Block Erase and
Word/Byte Program...........-2.0V to +14.0V
(1,2)
V
CC
Supply Voltage
with Respect to GND..............-2.0V to +7.0V
(1)
Output Short Circuit Current....................100 mA
(3)
NOTICE: This datasheet contains information on products in
the sampling and initial production phases of development.
The specifications are subject to change without notice.
Verify with your local Intel Sales office that you have the
latest datasheet before finalizing a design
* WARNING: Stressing the device beyond the "Absolute
Maximum Ratings" may cause permanent damage. These
are stress ratings only. Operation beyond the "Operating
Conditions" is not recommended and extended exposure
beyond the "Operating Conditions" may effect device
reliability.
NOTES:
1.
Minimum DC voltage is -0.5V on input/output pins.
During transitions, this level may undershoot to -2.0V
for periods
<20 ns. Maximum DC voltage on input/output pins is
V
CC
+ 0.5V which, during transitions, may overshoot to
V
CC
+ 2.0V for periods <20 ns.
Maximum DC voltage on V
PP
may overshoot to +14.0V
for periods <20ns. Maximum DC voltage on RP# or A
9
may overshoot to 13.5V for periods <20 ns.
Output shorted for no more than one second. No more
than one output shorted at a time.
2.
3.
相关PDF资料 |
PDF描述 |
|---|---|
| A28F200BX-B | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) |
| A28F400BR-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器) |
| A28F400BR-T | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引导块闪速存储器) |
| A28F400BX-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器) |
| A6FLR10MS02 | FAST RECOVERY DIODES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A28F200BR-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F200BR-T/B |
| A28F200BR-TB | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F200BX-T/B |
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