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参数资料
| 型号： | A28F200BR-T |
| 厂商： | Intel Corp. |
| 英文描述： | 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) |
| 中文描述： | 2兆位（128K的× 16）引导块闪存（2兆位（128K的× 16）引导块闪速存储器） |
| 文件页数： | 24/36页 |
| 文件大小： | 440K |
| 代理商： | A28F200BR-T |
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A28F200BR
E
24
ADVANCE INFORMATION
5.0
OPERATING CONDITIONS
Table 9. Temperature and V
CC
Operating Conditions
Parameter
Symbol
Notes
Min
Max
Units
T
A
Operating Temperature
-40
+125
°C
V
CC
V
CC
Supply Voltage (10%)
4.50
5.50
Volts
5.1
Applying V
CC
Voltages
If the V
CC
ramp rate is greater than 0.01 V/μs, a
delay of 2 μs is required before any device
operation can be initiated. This includes array or
status read, command writes and program or erase
operations. The 2 μs are measure beginning from
the time V
CC
reaches V
CCMIN
(4.5V). This delay is
not tied to the operation of the reset input. It is
recommended that the device be held in reset (RP#
= GND) while V
CC
is less than V
CCMIN
.
If the V
CC
ramp rate is less than 0.01 V/μs, no delay
is required once V
CC
has reached V
CCMIN
.
V
CC
Ramp Rate
Required Timing
≤
1V/100
μ
s
No delay required.
> 1V/100
μ
s
A delay time of 2
μ
s is required before any device operation is initiated, including read
operations, command writes, program operations, and erase operations. This delay
is
measured beginning from the time V
CC
reaches V
CCMIN
(4.5V for 5V operation).
NOTES:
1.
2.
3.
These requirements must be strictly followed to guarantee all other read and write specifications.
Any time the V
CC
supply drops below V
CCMIN
, the chip may be reset, aborting any operations pending or in progress.
These guidelines must be followed for any V
CC
transition from GND.
相关PDF资料 |
PDF描述 |
|---|---|
| A28F200BX-B | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) |
| A28F400BR-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器) |
| A28F400BR-T | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引导块闪速存储器) |
| A28F400BX-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器) |
| A6FLR10MS02 | FAST RECOVERY DIODES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A28F200BR-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F200BR-T/B |
| A28F200BR-TB | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F200BX-T/B |
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