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参数资料
| 型号： | ADN2525ACPZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC LASER DRIVER 10.7GBPS 16LFCSP |
| 标准包装： | 1,500 |
| 类型： | 激光二极管驱动器（光纤） |
| 数据速率： | 10.7Gbps |
| 通道数： | 1 |
| 电源电压： | 3.07 V ~ 3.53 V |
| 电流 - 电源： | 39mA |
| 电流 - 调制： | 80mA |
| 电流 - 偏置： | 100mA |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-VFQFN 裸露焊盘，CSP |
| 供应商设备封装： | 16-LFCSP-VQ |
| 包装： | 带卷 (TR) |
| 安装类型： | 表面贴装 |
ADN2525
SPECIFICATIONS
VCC = VCC MIN to VCC MAX , T A = ?40°C to +85°C, 50 Ω differential load resistance, unless otherwise noted. Typical values are specified at
25°C, IMOD = 40 mA.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
BIAS CURRENT (IBIAS)
Bias Current Range
10
100
mA
Bias Current while ALS Asserted
100
μA
ALS = high
Compliance Voltage 1
0.6
0.6
VCC – 1.2
VCC – 0.8
V
V
IBIAS = 100 mA
IBIAS = 10 mA
MODULATION CURRENT (IMODP, IMODN)
Modulation Current Range
Modulation Current While ALS Asserted
Rise Time (20% to 80%) 2, 3
Fall Time (20% to 80%) 2, 3
Random Jitter 2, 3
10
24
24
0.4
80
0.5
32.5
32.5
0.9
mA diff
mA diff
ps
ps
ps rms
R LOAD = 5 Ω to 50 Ω differential
ALS = high
Deterministic Jitter 3, 4
Pulse-Width Distortion 2, 3
Differential |S22|
Compliance Voltage 1
VCC ? 1.1
7.2
2
?10
?14
12
5
VCC + 1.1
ps p-p
ps
dB
dB
V
Includes pulse-width distortion
PWD = ABS(T HIGH ? T LOW )/2
5 GHz < f < 10 GHz, Z 0 = 50 Ω differential
f < 5 GHz, Z 0 = 50 Ω differential
DATA INPUTS (DATAP, DATAN)
Input Data Rate
10.7
Gbps
NRZ
Differential Input Swing
Differential |S11|
0.4
?16.8
1.6
V p-p diff
dB
Differential ac-coupled
f < 10 GHz, Z 0 = 100 Ω differential
Input Termination Resistance
85
100
115
Ω
Differential
BIAS CONTROL INPUT (BSET)
BSET Voltage to IBIAS Gain
BSET Input Resistance
75
800
100
1000
120
1200
mA/V
Ω
MODULATION CONTROL INPUT (MSET)
MSET Voltage to IMOD Gain
MSET Input Resistance
70
800
88
1000
110
1200
mA/V
Ω
BIAS MONITOR (IBMON)
IBMON to IBIAS Ratio
10
μA/mA
Accuracy of IBIAS to IBMON Ratio
?5.0
?4.0
?2.5
?2
+5.0
+4.0
+2.5
+2
%
%
%
%
10 mA ≤ IBIAS < 20 mA, R IBMON = 1 kΩ
20 mA ≤ IBIAS < 40 mA, R IBMON = 1 kΩ
40 mA ≤ IBIAS < 70 mA, R IBMON = 1 kΩ
70 mA ≤ IBIAS < 100 mA, R IBMON = 1 kΩ
AUTOMATIC LASER SHUTDOWN (ALS)
V IH
V IL
2.4
0.8
V
V
I IL
I IH
?20
0
+20
200
μA
μA
ALS Assert Time
2
μs
Rising edge of ALS to fall of IBIAS and
ALS Negate Time
10
μs
Falling edge of ALS to rise of IBIAS and
POWER SUPPLY
V CC
3.07
3.3
3.53
V
I CC 5
I SUPPLY 6
39
157
45
176
mA
mA
V BSET = V MSET = 0 V
V BSET = V MSET = 0 V; I SUPPLY = I CC + IMODP + IMODN
See notes on next page.
Rev. A | Page 3 of 16
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