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| 型号： | ADP1740ACPZ-1.1-R7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 5/20页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 1.1V 2A 16LFCSP |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 1.1V |
| 输入电压： | 1.6 V ~ 3.6 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 2A（最小值） |
| 电流 - 限制（最小）： | 2.4A |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘，CSP |
| 供应商设备封装： | 16-LFCSP-VQ EP（4x4） |
| 包装： | 标准包装 |
| 产品目录页面： | 794 (CN2011-ZH PDF) |
| 其它名称： | ADP1740ACPZ-1.1-R7DKR |
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VIN to GND ?0.3 V to +4.0 V
VOUT to GND ?0.3 V to V IN
EN to GND ?0.3 V to V IN
SS to GND ?0.3 V to V IN
PG to GND ?0.3 V to +4.0 V
SENSE/ADJ to GND ?0.3 V to V IN
Storage Temperature Range ?65°C to +150°C
Junction Temperature Range ?40°C to +125°C
Junction Temperature 150°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply only individually, not in
combination. The ADP1740/ADP1741 may be damaged when
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that the junction temperature is
within the specified temperature limits. In applications with
high power dissipation and poor PCB thermal resistance, the
maximum ambient temperature may need to be derated. In
applications with moderate power dissipation and low PCB
ADP1740/ADP1741
board design is required. The value of θ JA may vary, depending
on PCB material, layout, and environmental conditions. The
specified values of θ JA are based on a 4-layer, 4 in × 3 in circuit
board. Refer to JEDEC JESD51-7 for detailed information about
board construction. For more information, see the AN-772
Application Note, A Design and Manufacturing Guide for the
Lead Frame Chip Scale Package (LFCSP) , at www.analog.com .
Ψ JB is the junction-to-board thermal characterization parameter
with units of °C/W. Ψ JB of the package is based on modeling and
calculation using a 4-layer board. The JEDEC JESD51-12
document, Guidelines for Reporting and Using Electronic Package
Thermal Information , states that thermal characterization
parameters are not the same as thermal resistances. Ψ JB measures
the component power flowing through multiple thermal paths
rather than through a single path, as in thermal resistance (θ JB ).
Therefore, Ψ JB thermal paths include convection from the top of
the package, as well as radiation from the package, factors that
make Ψ JB more useful in real-world applications. Maximum
junction temperature (T J ) is calculated from the board temper-
ature (T B ) and the power dissipation (P D ) using the following
formula:
T J = T B + ( P D × Ψ JB )
Refer to the JEDEC JESD51-8 and JESD51-12 documents for
more detailed information about Ψ JB .
THERMAL RESISTANCE
θ JA and Ψ JB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits.
The junction temperature (T J ) of the device is dependent on the
Table 4. Thermal Resistance
Package Type
16-Lead LFCSP with Exposed Pad
θ JA
42
Ψ JB
25.5
Unit
°C/W
ambient temperature (T A ), the power dissipation of the device
(P D ), and the junction-to-ambient thermal resistance of the
ESD CAUTION
package (θ JA ). T J is calculated using the following formula:
T J = T A + ( P D × θ JA )
The junction-to-ambient thermal resistance (θ JA ) of the package
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
Rev. F | Page 5 of 20
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