- 您现在的位置：买卖IC网 > PDF目录366409 > AM29DS163DT120WAK (Advanced Micro Devices, Inc.) 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory PDF资料下载
参数资料
| 型号： | AM29DS163DT120WAK |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只，同时作业快闪记忆体 |
| 文件页数： | 3/50页 |
| 文件大小： | 1682K |
| 代理商： | AM29DS163DT120WAK |
第1页第2页当前第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
22326
Issue Date:
November 8, 2004
Rev:
A
Amendment/
1
Am29DS163D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
■
Multiple bank architectures
— Two devices available with different bank sizes (refer
to Table 3)
■
Secured Silicon (SecSi) Sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data.
—
Customer lockable:
Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed.
— 64 Kbyte sector size
■
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
■
Package options
— 48-ball FBGA
■
Top or bottom boot block
■
Manufactured on 0.23 μm process technology
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
■
High performance
— Access time as fast 100 ns
— Program time: 13 μs/word typical utilizing Accelerate function
■
Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■
Minimum 1 million write cycles guaranteed per sector
■
20 Year data retention at 125
°
C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Eases sector erase limitations
■
Supports Common Flash Memory Interface (CFI)
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
■
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■
Any combination of sectors can be erased
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
■
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function provides accelerated
program times
■
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
相关PDF资料 |
PDF描述 |
|---|---|
| AM29DS163DT120WAKN | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB100WAK | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB100WAKN | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| Am29DS163DB120 | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB120WAE | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29DS323DT-110WMI | 制造商:Spansion 功能描述:NOR Flash Parallel 32Mbit 4M/2M x 8bit/16bit 110ns 48-Pin FBGA |
| AM29DS323DT11WMINS | 制造商:Advanced Micro Devices 功能描述: |
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
| AM29F002BB-120EC | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, TSOP32, COM - Trays |
| AM29F002BB-120JCT | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, PLCC32, COM, T&R - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。