- 您现在的位置：买卖IC网 > PDF目录366409 > AM29DS163DT120WAK (Advanced Micro Devices, Inc.) 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory PDF资料下载
参数资料
| 型号： | AM29DS163DT120WAK |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只，同时作业快闪记忆体 |
| 文件页数： | 48/50页 |
| 文件大小： | 1682K |
| 代理商： | AM29DS163DT120WAK |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页当前第48页第49页第50页
48
Am29DS163D
A D V A N C E I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 2.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.2 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 14 on page 27
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 2.0 V, one pin at a time.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
2
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
78
sec
Byte Program Time
9
270
μs
Excludes system level
overhead (Note 5)
Word Program Time
13
340
μs
Accelerated Byte/Word Program Time
7
210
μs
Chip Program Time
(Note 3)
Byte Mode
28
80
sec
Word Mode
14
40
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
11 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
125
°
C
10
Years
20
Years
相关PDF资料 |
PDF描述 |
|---|---|
| AM29DS163DT120WAKN | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB100WAK | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB100WAKN | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| Am29DS163DB120 | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB120WAE | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29DS323DT-110WMI | 制造商:Spansion 功能描述:NOR Flash Parallel 32Mbit 4M/2M x 8bit/16bit 110ns 48-Pin FBGA |
| AM29DS323DT11WMINS | 制造商:Advanced Micro Devices 功能描述: |
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
| AM29F002BB-120EC | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, TSOP32, COM - Trays |
| AM29F002BB-120JCT | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, PLCC32, COM, T&R - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。