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参数资料
| 型号： | AM29F800BB-70SD |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 512K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
| 封装： | LEAD FREE, MO-180AA, SOP-44 |
| 文件页数： | 2/45页 |
| 文件大小： | 1402K |
| 代理商： | AM29F800BB-70SD |
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Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the elements below.
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F800B
T
-70
E
C
TEMPERATURE RANGE
C
=
Commercial (0°C to +70°C)
D
=
Commercial (0°C to +70°C) with Pb-Free Package
I
=
Industrial (–40
°C to +85°C)
F
=
Industrial (–40
°C to +85°C) with Pb-Free Package
E
=
Extended (–55
°C to +125°C)
K
=
Extended (–55
°C to +125°C) with Pb-Free Package
PACKAGE TYPE
E
=
48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 048)
S
=
44-Pin Small Outline Package (SO 044)
WB
=
48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 9 mm package (FBB048)
This device is also available in Known Good Die (KGD) form. See publication number
21536 for more information.
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F800B
8 Megabit (1 M x 8-Bit/512K x 16-Bit) CMOS Flash Memory
5.0 Volt-only Read, Program and Erase
Valid Combinations
AM29F800BT-55,
AM29F800BB-55
EC, EI, EE, ED, EF, EK
SC, SI, SE, SD, SF, SK
AM29F800BT-70,
AM29F800BB-70
AM29F800BT-90,
AM29F800BB-90
AM29F800BT-120,
AM29F800BB-120
Valid Combinations for FBGA Packages
Order Number
Package Marking
AM29F800BT-55,
AM29F800BB-55
WBC,
WBI,
WBE,
WBD,
WBF,
WBK
F800BT55V,
F800BB55V
C, I, E,
D, F, K
AM29F800BT-70,
AM29F800BB-70
F800BT70V,
F800BB70V
AM29F800BT-90,
AM29F800BB-90
F800BT90V,
F800BB90V
AM29F800BT-120,
AM29F800BB-120
F800BT12V,
F800BB12V
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800BB-90ED | FLASH BOTTOM BLOCK 8MB, SMD, 29F800; Memory type:Bottom Block; Memory size:8Mbit; Memory configuration:1Mx8 or 512Kx16; Time, access:90ns; Voltage, Memory Vcc:5V; Case style:TSOP; Temperature, operating range:0(degree C) to RoHS Compliant: Yes |
| AM29F800BB-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BB-90SC | Flash Memory IC; Access Time, Tacc:90ns; Package/Case:44-SO; Leaded Process Compatible:No; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No |
| AM29F800BB-90SD | Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BB-90SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BB-70SD | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F800BB-70SE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 70ns 44-Pin SO |
| AM29F800BB-70SF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BB-70SI | 制造商:Spansion 功能描述:8M CMOS FLASH 5V |
| AM29F800BB-90EC | 制造商:Spansion 功能描述:8M CMOS FLASH 5V |
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