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参数资料
| 型号： | AM29F800BB-70SD |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 512K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
| 封装： | LEAD FREE, MO-180AA, SOP-44 |
| 文件页数： | 26/45页 |
| 文件大小： | 1402K |
| 代理商： | AM29F800BB-70SD |
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30
Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Description
Speed Options
JEDEC
Std
-55
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
50
ns
tDVWH
tDS
Data Setup Time
Min
25
30
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
35
45
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
Programming Operation (Note 2)
Byte
Typ
7
s
Word
Typ
12
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
tVCS
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
30
35
50
ns
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800BB-90ED | FLASH BOTTOM BLOCK 8MB, SMD, 29F800; Memory type:Bottom Block; Memory size:8Mbit; Memory configuration:1Mx8 or 512Kx16; Time, access:90ns; Voltage, Memory Vcc:5V; Case style:TSOP; Temperature, operating range:0(degree C) to RoHS Compliant: Yes |
| AM29F800BB-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BB-90SC | Flash Memory IC; Access Time, Tacc:90ns; Package/Case:44-SO; Leaded Process Compatible:No; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No |
| AM29F800BB-90SD | Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BB-90SF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BB-70SD | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F800BB-70SE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 70ns 44-Pin SO |
| AM29F800BB-70SF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BB-70SI | 制造商:Spansion 功能描述:8M CMOS FLASH 5V |
| AM29F800BB-90EC | 制造商:Spansion 功能描述:8M CMOS FLASH 5V |
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