参数资料
型号: AM29F800BB-70SD
厂商: SPANSION LLC
元件分类: PROM
英文描述: Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
中文描述: 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
封装: LEAD FREE, MO-180AA, SOP-44
文件页数: 7/45页
文件大小: 1402K
代理商: AM29F800BB-70SD
March 3, 2009 21504E6
Am29F800B
13
D A TA SH EE T
Table 4.
Am29F800B Autoselect Codes (High Voltage Method)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables both
program and erase operations in previously pro-
tected sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure re-
quires a high voltage (VID) on address pin A9 and the
control pins. Details on this method are provided in a
supplement, publication number 20374. Contact an
AMD representative to obtain a copy of the appropriate
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting the
RESET# pin to VID. During this mode, formerly pro-
tected sectors can be programmed or erased by se-
lecting the sector addresses. Once VID is removed
from the RESET# pin, all the previously protected
sectors are protected again. Figure 1 shows the algo-
rithm, and the Temporary Sector Unprotect diagram
shows the timing waveforms, for this feature.
Figure 1.
Temporary Sector Unprotect Operation
Description
Mode
CE#
OE#
WE#
A18
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8
to
DQ15
DQ7
to
DQ0
Manufacturer ID: AMD
L
H
X
VID
X
L
X
L
X
01h
Device ID:
Am29F800B
(Top Boot Block)
Word
L
H
X
VID
X
L
X
L
H
22h
D6h
Byte
L
H
X
D6h
Device ID:
Am29F800B
(Bottom Boot Block)
Word
L
H
X
VID
X
L
X
L
H
22h
58h
Byte
L
H
X
58h
Sector Protection Verification
L
H
SA
X
VID
X
L
X
H
L
X
01h
(protected)
X
00h
(unprotected)
START
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect
Completed (Note 2)
RESET# = VID
(Note 1)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
相关PDF资料
PDF描述
AM29F800BB-90ED FLASH BOTTOM BLOCK 8MB, SMD, 29F800; Memory type:Bottom Block; Memory size:8Mbit; Memory configuration:1Mx8 or 512Kx16; Time, access:90ns; Voltage, Memory Vcc:5V; Case style:TSOP; Temperature, operating range:0(degree C) to RoHS Compliant: Yes
AM29F800BB-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-90SC Flash Memory IC; Access Time, Tacc:90ns; Package/Case:44-SO; Leaded Process Compatible:No; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No
AM29F800BB-90SD Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-90SF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
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