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| 型号： | AO4447A |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 17A 8-SOIC |
| 产品目录绘图： | 8-SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 17A，10V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 105nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5500pF @ 15V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | 785-1198-6 |
AO4447A
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =-250 μ A, V GS = 0V
-30
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =-30V, V GS = 0V
V DS = 0V, V GS =±16V
T J = 55°C
-1
-5
±10
μ A
μ A
V GS(th)
I D(ON)
Gate Threshold Voltage
On state drain current
V DS =V GS I D =-250 μ A
V GS =-10V, V DS =-5V
-0.8
-160
-1.3
-1.6
V
A
V GS =-10V, I D =-17A
5.5
7
R DS(ON)
Static Drain-Source On-Resistance
V GS =-4.5V, I D =-15A
T J =125°C
7
6.5
8.5
8
m ?
V GS =-4V, I D =-13A
6.9
9
g FS
Forward Transconductance
V DS =-5V, I D =-17A
70
S
V SD
Diode Forward Voltage
I S =-1A,V GS = 0V
-0.62
-1
V
I S
Maximum Body-Diode Continuous Current
-3
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
4580
5500
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
V GS =0V, V DS =-15V, f=1MHz
755
564
pF
pF
R g
Gate resistance
V GS =0V, V DS =0V, f=1MHz
160
210
?
SWITCHING PARAMETERS
Q g (-10V) Total Gate Charge
87
105
nC
Q g (-4.5V) Total Gate Charge
Q gs Gate Source Charge
V GS =-10V, V DS =-15V, I D =-17A
41
12.8
nC
nC
Q gd
t D(on)
Gate Drain Charge
Turn-On DelayTime
17
180
nC
ns
t r
t D(off)
t f
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =-10V, V DS =-15V
R L =-0.9 ? , R GEN =3 ?
260
1.2
9.7
ns
μ s
μ s
t rr
Body Diode Reverse Recovery Time
I F =-17A, dI/dt=300A/ μ s
32
40
ns
Q rr
Body Diode Reverse Recovery Charge I F =-17A, dI/dt=300A/ μ s
77
nC
A: The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P D is based on T J(MAX) =150 ° C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 ° C. Ratings are based on low frequency and duty cycles to keep
initial T J =25 ° C.
D. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
with
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board #REF!
2oz. Copper, assuming a maximum junction temperature of T J(MAX) =150 ° C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2013
www.aosmd.com
Page 2 of 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4447AL | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET P-CH 30V 17A 8-Pin SO |
| AO4447L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4448 | 功能描述:MOSFET N-CH 80V 10A 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4448L | 制造商:AOS 功能描述:MOSFET |
| AO4449 | 功能描述:MOSFET P-CH 30V 7A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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