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| 型号： | AON6232 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 40V 85A DFN5X6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3800pF @ 20V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP（5x6） |
| 包装： | 标准包装 |
| 其它名称： | 785-1331-6 |
AON6232
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 μ A, V GS =0V
40
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =40V, V GS =0V
V DS =0V, V GS =±20V
T J =55°C
1
5
100
μ A
nA
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =V GS, I D =250 μ A
V GS =10V, V DS =5V
V GS =10V, I D =20A
T J =125°C
1.3
260
1.8
2.05
3.2
2.3
2.5
3.9
V
A
m ?
V GS =4.5V, I D =20A
2.8
3.6
m ?
g FS
Forward Transconductance
V DS =5V, I D =20A
100
S
V SD
Diode Forward Voltage
I S =1A,V GS =0V
0.68
1
V
I S
Maximum Body-Diode Continuous Current G
85
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
2530
3165
3800
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =20V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
630
15
0.4
905
52.5
0.85
1180
90
1.3
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
33
42
51
nC
Q g (4.5V) Total Gate Charge
Q gs Gate Source Charge
Q gd
Gate Drain Charge
t D(on)
Turn-On DelayTime
t r
Turn-On Rise Time
t D(off)
Turn-Off DelayTime
t f
Turn-Off Fall Time
V GS =10V, V DS =20V, I D =20A
V GS =10V, V DS =20V, R L =1 ? ,
R GEN =3 ?
12
18.2
9.6
2.8
8.7
4.5
33.5
6.2
24
nC
nC
nC
ns
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =20A, dI/dt=500A/ μ s
15
22.5
30
ns
Q rr
Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/ μ s
41
59
77
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25
C. The
Power dissipation P DSM is based on R θ JA and the maximum allowed junction temperature of 150
on the user's specific board design.
C. The value in any given application depends
B. The power dissipation P D is based on T J(MAX) =150
C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150
C. Ratings are based on low frequency and duty cycles to keep
initial T J =25
C.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX) =150
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2011
www.aosmd.com
Page 2 of 6
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