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参数资料
| 型号： | AUIRFR120ZTR |
| 厂商： | International Rectifier |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 8.7A DPAK |
| 标准包装： | 2,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 190 毫欧 @ 5.2A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 310pF @ 25V |
| 功率 - 最大： | 35W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
PD - 96345
AUIRFR120Z
AUTOMOTIVE MOSFET
AUIRFU120Z
Features
l Advanced Process Technology
D
HEXFET ? Power MOSFET
V (BR)DSS 100V
l
l
l
l
l
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
G
S
R DS(on) typ.
max.
I D
150m ?
190m ?
8.7A
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET ? Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
D
S
D
G
D-Pak
AUIRFR120Z
D
S
D
G
I-Pak
AUIRFU120Z
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A ) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
8.7
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
E AS (Tested )
I AR
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
6.1
35
35
0.23
± 20
18
20
See Fig.12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
E AR
T J
T STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
4.28
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
–––
–––
50
110
°C/W
HEXFET ? is a registered trademark of International Rectifier.
* Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
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| AUIRFR2307ZTRL | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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