参数资料
型号: AUIRFR120ZTR
厂商: International Rectifier
文件页数: 3/14页
文件大小: 0K
描述: MOSFET N-CH 100V 8.7A DPAK
标准包装: 2,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 8.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 190 毫欧 @ 5.2A,10V
Id 时的 Vgs(th)(最大): 4V @ 25µA
闸电荷(Qg) @ Vgs: 10nC @ 10V
输入电容 (Ciss) @ Vds: 310pF @ 25V
功率 - 最大: 35W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
AUIRFR/U120Z
Qualification Information ?
Automotive
(per AEC-Q101)
??
Qualification Level
Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
D PAK
I-PAK
MSL1
N/A
Class M1B (100V)
( per AEC-Q101-002)
ESD
Human Body Model
Class H0 (100V)
(per AEC-Q101-001)
RoHS Compliant
Charged Device
Model
Class C5 (2000V)
AEC-Q101-005
Yes
?
Qualification standards can be found at International Rectifier?s web site: http//www.irf.com/
?? Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
? Repetitive rating; pulse width limited by ? C oss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11). as C oss while V DS is rising from 0 to 80% V DSS .
? Limited by T Jmax , starting T J = 25°C, L = 1.29mH ? Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
R G = 25 ? , I AS = 5.2A, V GS =10V. Part not
avalanche performance.
recommended for use above this value.
? Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
?
This value determined from sample failure population. 100%
tested to this value in production.
? When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
www.irf.com
3
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