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| 型号： | BF1206F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 12/21页 |
| 文件大小： | 320K |
| 代理商： | BF1206F |
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
12 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(B)
= 2.8 V; T
j
= 25
C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(B)
= 2.8 V; T
j
= 25
C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
V
DS(B)
= 2.8 V; V
G2-S
= 2.5 V, T
amb
= 25
C.
V
DS(B)
= 2.8 V; V
G2-S
= 2.5 V; R
G1(B)
= 220 k
;
see
Figure 32
.
Fig 21. Amplifier B: drain current as a function of
gate1 current; typical values
Fig 22. Amplifier B: drain voltage as a function of
gate1 supply voltage (=V
GG
); typical values
V
G1
S
(V)
0
2.5
2.0
1.0
1.5
0.5
001aad913
40
60
20
80
100
I
G1
(
μ
A)
0
(1)
(2)
(3)
(4)
I
D
(mA)
0
16
12
4
8
001aad914
20
10
30
40
Y
fs
(mS)
0
(1)
(2)
(3)
(4)
001aad915
I
G1
(
μ
A)
0
30
20
10
8
4
12
16
I
D
(mA)
0
V
GG
(V)
0
3
2
1
001aad916
2
4
6
I
D
(mA)
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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