参数资料
型号: BF1206F
厂商: NXP Semiconductors N.V.
元件分类: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封装: BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件页数: 7/21页
文件大小: 320K
代理商: BF1206F
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
7 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
(1) R
G1
= 100 k
.
(2) R
G1
= 120 k
.
(3) R
G1
= 150 k
.
(4) R
G1
= 180 k
.
(5) R
G1
= 220 k
.
(6) R
G1
= 270 k
.
(7) R
G1
= 330 k
.
(8) R
G1
= 390 k
.
(9) R
G1
= 470 k
.
V
G2-S
= 2.5 V; T
j
= 25
C; see
Figure 32
.
Fig 8.
Amplifier A: drain current as a function of V
DS
and V
GG
; typical values
(1) V
GG
= 1.0 V
(2) V
GG
= 1.5 V
(3) V
GG
= 2.0 V
(4) V
GG
= 2.5 V
(5) V
GG
= 3.0 V
T
j
= 25
C; R
G1(A)
= 270 k
(connected to V
GG
);
see
Figure 32
.
Fig 9.
Amplifier A: drain current as a function of
gate2 voltage; typical values
V
GG
= V
DS
(V)
0
4
3
1
2
001aad902
4
6
2
8
10
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
V
G2
S
(V)
0
4
3
1
2
001aad903
2
4
6
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
相关PDF资料
PDF描述
BF1206F Dual N-channel dual-gate MOSFET
BF1206 Dual N-channel dual-gate MOSFET
BF1206 Dual N-channel dual-gate MOSFET
BF1207 Dual N-channel dual-gate MOSFET
BF1207 Dual N-channel dual-gate MOSFET
相关代理商/技术参数
参数描述
BF1206F,115 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1207 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET
BF1207 T/R 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1207,115 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1208 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET