参数资料
型号: BF1206F
厂商: NXP Semiconductors N.V.
元件分类: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封装: BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件页数: 18/21页
文件大小: 320K
代理商: BF1206F
BF1206F
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NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
18 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
11. Revision history
Table 14.
Document ID
BF1206F v.2
Modifications:
Revision history
Release date
20110907
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
20060130
Product data sheet
Data sheet status
Product data sheet
Change notice
-
Supersedes
BF1206F v.1
BF1206F v.1
-
-
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相关代理商/技术参数
参数描述
BF1206F,115 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1207 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET
BF1207 T/R 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1207,115 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1208 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET