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参数资料
| 型号： | BSP250-T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 12/12页 |
| 文件大小： | 93K |
| 代理商： | BSP250-T |
1997 Jun 20
9
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSP250
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specication
This data sheet contains target or goal specications for product development.
Preliminary specication
This data sheet contains preliminary data; supplementary data may be published later.
Product specication
This data sheet contains nal product specications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specication
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specication.
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相关代理商/技术参数 |
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|---|---|
| BSP250T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3A I(D) | SOT-223 |
| BSP254 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:P-channel enhancement mode vertical D-MOS transistor |
| BSP25401.20M | 制造商:TE Connectivity 功能描述:CGPT Polyolefin Heatshrink 25.4mm Black |
| BSP254A | 制造商:NXP Semiconductors 功能描述:MOSFET P TO-92 AMMO-BOX 2K |
| BSP254A AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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