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参数资料
| 型号： | BSP250-T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 9/12页 |
| 文件大小： | 93K |
| 代理商： | BSP250-T |
1997 Jun 20
6
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSP250
Fig.8
Source current as a function of source-drain
diode forward voltage.
VGD =0.
(1) Tj = 150 °C.
(2) Tj =25 °C.
(3) Tj = 55 °C.
handbook, halfpage
0
0.5
1
1.5
2
2.5
6
2
0
4
MBE148
IS
(A)
VSD (V)
(1)
(2)
(3)
Fig.9
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
V
DS ≥ID × RDSon; Tj =25 °C.
(1) ID = 0.1 A.
(2) ID = 0.5 A.
(3) ID = 1A.
(4) ID = 3A.
(5) ID = 6A.
handbook, halfpage
10
0
(1)
(4)
(5)
VGS (V)
RDSon
(m
)
2
4
6
8
104
103
102
MDA218
(2)(3)
Fig.10 Temperature coefficient of gate-source
threshold voltage.
handbook, halfpage
0.6
0.7
0.8
0.9
1.0
1.2
1.1
0
50
100
150
50
k
Tj (°C)
MBE138
Typical VGSth at ID = 1 mA; VDS =VGS =VGSth.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
Fig.11 Temperature coefficient of drain-source
on-resistance.
Typical RDSon at:
(1) ID = 1 A; VGS = 10 V.
(2) ID = 0.5 A; VGS = 4.5 V.
k
R
DSon at Tj
R
DSon at 25 ° C
-----------------------------------------
=
handbook, halfpage
0.6
0.8
1.0
1.2
1.4
1.8
1.6
0
50
100
150
50
k
Tj (°C)
MBE146
(1)
(2)
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