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参数资料
| 型号： | BSP250-T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/12页 |
| 文件大小： | 93K |
| 代理商： | BSP250-T |
1997 Jun 20
3
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSP250
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Pulse width and duty cycle limited by maximum junction temperature.
2. Device mounted on an epoxy printed-circuit board, 40
× 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
30
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
Ts ≤ 100 °C
3A
IDM
peak drain current
note 1
12
A
Ptot
total power dissipation
Ts = 100 °C
5W
Tamb =25 °C; note 2
1.65
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
Source-drain diode
IS
source current (DC)
Ts ≤ 100 °C
1.5
A
ISM
peak pulsed source current
note 1
6A
Fig.2 Power derating curve.
handbook, halfpage
0
200
2.0
0
0.4
0.8
1.2
1.6
MLB885
Tamb (°C)
50
100
150
Ptot
(W)
δ = 0.01.
Soldering point temperature Ts = 100 °C.
(1) RDSon limitation.
Fig.3 SOAR.
handbook, halfpage
MLB835
VDS (V)
ID
(A)
101
102
1
10
102
102
101
1
10
tp
T
P
t
T
δ =
1 ms
DC
(1)
tp =
10
s
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