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参数资料
| 型号： | BSP250-T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 8/12页 |
| 文件大小： | 93K |
| 代理商： | BSP250-T |
1997 Jun 20
5
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSP250
Fig.4
Capacitance as a function of drain source
voltage; typical values.
VGS =0.
Tj =25 °C.
handbook, halfpage
0
600
400
200
0
10
20
30
MBE144
C
(pF)
VDS (V)
Ciss
Coss
Crss
Fig.5 Output characteristics; typical values.
Tj =25 °C.
handbook, halfpage
0
2
10
12
10
12
8
6
2
0
4
MBE149
4
6
8
V
(V)
DS
ID
(A)
VGS =
10 V
6 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
7.5 V
Fig.6 Transfer characteristic, typical values.
VDS = 10 V.
Tj =25 °C.
handbook, halfpage
0
2
4
8
16
12
4
0
8
MBE150
6
ID
(A)
VGS (V)
Fig.7
Gate-source voltage as a function of total
gate charge.
VDD = 15 V.
ID = 3A.
handbook, halfpage
0
2
4
10
8
10
0
8
MBE145
6
4
2
Qg (nC)
VGS
(V)
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相关代理商/技术参数 |
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|---|---|
| BSP250T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3A I(D) | SOT-223 |
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| BSP254A AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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