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参数资料
| 型号： | BSP250-T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/12页 |
| 文件大小： | 93K |
| 代理商： | BSP250-T |
1997 Jun 20
2
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSP250
FEATURES
High-speed switching
No secondary breakdown
Very low on-resistance.
APPLICATIONS
Low-loss motor and actuator drivers
Power switching.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT223
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
d
drain
3
s
source
4
d
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM121
4
12
3
Top view
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
30
V
VSD
source-drain diode forward voltage
IS = 1.25 A
1.6
V
VGSO
gate-source voltage (DC)
open drain
±20
V
VGSth
gate-source threshold voltage
ID = 1 mA; VDS =VGS
1
2.8
V
ID
drain current (DC)
3A
RDSon
drain-source on-state resistance
ID = 1 A; VGS = 10 V
0.25
Ptot
total power dissipation
Ts = 100 °C
5W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSP250T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3A I(D) | SOT-223 |
| BSP254 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:P-channel enhancement mode vertical D-MOS transistor |
| BSP25401.20M | 制造商:TE Connectivity 功能描述:CGPT Polyolefin Heatshrink 25.4mm Black |
| BSP254A | 制造商:NXP Semiconductors 功能描述:MOSFET P TO-92 AMMO-BOX 2K |
| BSP254A AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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