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参数资料
| 型号： | BSP250-T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/12页 |
| 文件大小： | 93K |
| 代理商： | BSP250-T |
1997 Jun 20
4
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSP250
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy printed-circuit board, 40
× 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
Rth j-s
thermal resistance from junction to soldering point
10
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 A
30
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = 1mA
1
2.8
V
IDSS
drain-source leakage current
VGS = 0; VDS = 24 V
100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
±100
nA
IDon
on-state drain current
VGS = 10 V; VDS = 1V
3
A
VGS = 4.5 V; VDS = 5V
1
A
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 0.5 A
0.33
0.4
VGS = 10 V; ID = 1A
0.22
0.25
y
fs
forward transfer admittance
VDS = 20 V; ID = 1A
1
2
S
Ciss
input capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
250
pF
Coss
output capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
140
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
50
pF
QG
total gate charge
VGS = 10 V; VDS = 15 V;
ID = 2.3 A
10
25
nC
QGS
gate-source charge
VGS = 10 V; VDS = 15 V;
ID = 2.3 A
1
nC
QGD
gate-drain charge
VGS = 10 V; VDS = 15 V;
ID = 2.3 A
3
nC
Switching times
ton
turn-on time
VGS =0to 10 V; VDD = 20 V;
ID = 1 A; RL =20
20
80
ns
toff
turn-off time
VGS = 10 to 0 V; VDD = 20 V;
ID = 1 A; RL =20
50
140
ns
Source-drain diode
VSD
source-drain diode forward voltage
VGD = 0; IS = 1.25 A
1.6
V
trr
reverse recovery time
IS = 1.25 A; di/dt = 100 A/s
150
200
ns
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相关代理商/技术参数 |
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| BSP254A AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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