参数资料
型号: COP8CDR9HVA8/NOPB
厂商: National Semiconductor
文件页数: 20/111页
文件大小: 0K
描述: IC MCU CMOS 8BIT 44-PLCC
标准包装: 25
系列: COP8™ 8C
核心处理器: COP8
芯体尺寸: 8-位
速度: 20MHz
连通性: Microwire/Plus(SPI),UART/USART
外围设备: POR,PWM,WDT
输入/输出数: 37
程序存储器容量: 32KB(32K x 8)
程序存储器类型: 闪存
RAM 容量: 1K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 16x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 44-LCC(J 形引线)
包装: 管件
其它名称: *COP8CDR9HVA8
*COP8CDR9HVA8/NOPB
COP8CDR9HVA8
SNOS535I – OCTOBER 2000 – REVISED MARCH 2013
AC Electrical Characteristics (
40°C ≤ TA ≤ +125°C) (continued)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Output Pulse Width
Timer 2, 3 Output High Time
150
ns
Timer 2, 3 Output Low Time
150
ns
USART Bit Time when using External CKX
6 CKI
periods
USART CKX Frequency when being Driven by Internal
Baud Rate Generator
2
MHz
Reset Pulse Width
0.5
tC
3.7
A/D Converter Electrical Characteristics (
40°C ≤ T
A ≤ +125°C) (Single-ended mode
only)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Resolution
10
Bits
DNL
VCC = 5V
±1
LSB
INL
VCC = 5V
±3
LSB
Offset Error
VCC = 5V
+2.5,
1
LSB
Gain Error
VCC = 5V
+0.5,
2.5
LSB
Input Voltage Range
4.5V
≤ VCC < 5.5V
0
VCC
V
Analog Input Leakage Current
0.5
A
Analog Input Resistance(1)
6k
Analog Input Capacitance
7
pF
Conversion Clock Period
4.5V
≤ VCC < 5.5V
0.8
30
s
Conversion Time (including S/H Time)
15
A/D
Conversion
Clock
Cycles
Operating Current on AVCC
AVCC = 5.5V
0.2
0.6
mA
(1)
Resistance between the device input and the internal sample and hold capacitance.
Figure 3-1. MICROWIRE/PLUS Timing
16
Electrical Specifications
Copyright 2000–2013, Texas Instruments Incorporated
Product Folder Links: COP8CBR9 COP8CCR9 COP8CDR9
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