参数资料
型号: COP8CDR9HVA8/NOPB
厂商: National Semiconductor
文件页数: 36/111页
文件大小: 0K
描述: IC MCU CMOS 8BIT 44-PLCC
标准包装: 25
系列: COP8™ 8C
核心处理器: COP8
芯体尺寸: 8-位
速度: 20MHz
连通性: Microwire/Plus(SPI),UART/USART
外围设备: POR,PWM,WDT
输入/输出数: 37
程序存储器容量: 32KB(32K x 8)
程序存储器类型: 闪存
RAM 容量: 1K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 16x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 44-LCC(J 形引线)
包装: 管件
其它名称: *COP8CDR9HVA8
*COP8CDR9HVA8/NOPB
COP8CDR9HVA8
SNOS535I – OCTOBER 2000 – REVISED MARCH 2013
5.8.1
Oscillator
CKI is the clock input while G7/CKO is the clock generator output to the crystal. An on-chip bias resistor
connected between CKI and CKO is provided to reduce system part count. The value of the resistor is in
the range of 0.5M to 2M (typically 1.0M). Table 5-1 shows the component values required for various
standard crystal values. Resistor R2 is on-chip, for the high speed oscillator, and is shown for reference.
Figure 5-6 and Figure 5-6 shows the crystal oscillator connection diagrams. A ceramic resonator of the
required frequency may be used in place of a crystal if the accuracy requirements are not quite as strict.
High Speed Oscillator
Low Speed Oscillator
Figure 5-6. Crystal Oscillator
Table 5-1. Crystal Oscillator Configuration, TA = 25°C, VCC = 5V
(1)
CKI Freq.
R1 (k
Ω)
R2 (M
Ω)
C1 (pF)
C2 (pF)
(MHz)
0
On Chip
18
10
0
On Chip
18
5
0
On Chip
18–36
1
5.6
On Chip
100
100–156
0.455
0
20
**
32.768 kHz*
(1)
*Applies to connection to low speed oscillator on port pins L0 and L1 only.
**See Note below.
The crystal and other oscillator components should be placed in close proximity to the CKI and CKO pins
to minimize printed circuit trace length.
The values for the external capacitors should be chosen to obtain the manufacturer's specified load
capacitance for the crystal when combined with the parasitic capacitance of the trace, socket, and
package (which can vary from 0 to 8 pF). The guideline in choosing these capacitors is:
Manufacturer's specified load cap = (C1 * C2) / (C1 + C2) + Cparasitic
C2 can be trimmed to obtain the desired frequency. C2 should be less than or equal to C1.
NOTE
The low power design of the low speed oscillator makes it extremely sensitive to board
layout and load capacitance. The user should place the crystal and load capacitors within
1cm. of the device and must ensure that the above equation for load capacitance is strictly
followed. If these conditions are not met, the application may have problems with startup of
the low speed oscillator.
30
Functional Description
Copyright 2000–2013, Texas Instruments Incorporated
Product Folder Links: COP8CBR9 COP8CCR9 COP8CDR9
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