参数资料
型号: CPH5617-TL-E
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH ARRAY 30V 150MA CPH5
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 150mA
开态Rds(最大)@ Id, Vgs @ 25° C: 3.7 欧姆 @ 80mA,4V
Id 时的 Vgs(th)(最大): 1.3V @ 100µA
闸电荷(Qg) @ Vgs: 1.58nC @ 10V
输入电容 (Ciss) @ Vds: 7pF @ 10V
功率 - 最大: 250mW
安装类型: 表面贴装
封装/外壳: *
供应商设备封装: 5-CPH
包装: 带卷 (TR)
Ordering number : EN7370C
CPH5617
N-Channel Power MOSFET
30V, 150mA, 3.7 Ω , Dual CPH5
Features
http://onsemi.com
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?
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Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in the one package, improving the mounting ef ? ciency greatly
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±10
150
Unit
V
V
mA
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
600
0.25
150
--55 to +150
mA
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7017A-004
Product & Package Information
? Package : CPH5
? JEITA, JEDEC : SC-74A, SOT-25
? Minimum Packing Quantity : 3,000 pcs./reel
5
2.9
4
3
0.15
CPH5617-TL-E
Packing Type : TL
Marking
0.05
TL
1
0.95
2
0.4
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
Electrical Connection
5 4 3
CPH5
Semiconductor Components Industries, LLC, 2013
1
2
August, 2013
82113 TKIM TC-00002980/71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/6
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