参数资料
型号: CPH5871-TL-H
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH DIODE SCHOTTKY CPH5
标准包装: 3,000
FET 型: MOSFET N 通道,肖特基,金属氧化物!
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 52 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1.3V @ 1mA
闸电荷(Qg) @ Vgs: 4.7nC @ 4.5V
输入电容 (Ciss) @ Vds: 430pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: SC-74A,SOT-753
供应商设备封装: 5-CPH
包装: 带卷 (TR)
Ordering number : ENA1401A
CPH5871
N-Channel Power MOSFET
30V, 3.5A, 52m Ω , Single CPH5 with Schottky Diode
Features
http://onsemi.com
?
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting
?
Halogen free compliance
? Protection diode in
?
?
[MOSFET]
[SBD]
? Ultrahigh-speed switching
? Short reverse recovery time
? 1.8V drive
? Low forward voltage
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
30
±12
3.5
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (600mm 2 × 0.8mm) 1unit
14
0.9
150
--55 to +125
A
W
°C
° C
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
VRRM
V RSM
I O
30
35
1
V
V
A
Surge Forward Current
Junction Temperature
Storage Temperature
I FSM
Tj
Tstg
50Hz sine wave, 1 cycle
10
--55 to +125
--55 to +125
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7017A-005
Product & Package Information
? Package : CPH5
? JEITA, JEDEC : SC-74A, SOT-25
? Minimum Packing Quantity : 3,000 pcs./reel
5
2.9
4
3
0.15
CPH5871-TL-H
Packing Type : TL
Marking
0.05
TL
1
0.95
2
0.4
1 : Cathode
2 : Drain
3 : Gate
Electrical Connection
5
4
3
4 : Source
5 : Anode
CPH5
Semiconductor Components Industries, LLC, 2013
1
2
July, 2013
61312 TKIM/12809PE MSIM TC-00001794 No. A1401-1/7
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