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参数资料
| 型号： | CPH5871-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DIODE SCHOTTKY CPH5 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，肖特基，金属氧化物! |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 52 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 4.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 430pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | 5-CPH |
| 包装： | 带卷 (TR) |
CPH5871
Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1401-7/7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPH5871-TL-W | 功能描述:MOSFET N-CH 30V 3.5A CPH5 制造商:on semiconductor 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:二极管（隔离式） 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:3.5A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:52 毫欧 @ 2A，4.5V 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:4.7nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:430pF @ 10V 功率 - 最大值:900mW 工作温度:-55°C ~ 125°C（TJ） 安装类型:表面贴装 封装/外壳:SC-74A，SOT-753 供应商器件封装:5-CPH 标准包装:3,000 |
| CPH5901 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications |
| CPH5901_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications |
| CPH5901F-TL-E | 功能描述:JFET NCH J-FET+BIP NPN TR RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| CPH5901G-TL-E | 功能描述:JFET NCH J-FET+BIP NPN TR RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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