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| 型号： | CPH6341-TL-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 5A CPH6 |
| 产品目录绘图： | CPH6 Package P, N, N/P, Dual N Channel Top |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 59 毫欧 @ 3A，10V |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 430pF @ 10V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-CPH |
| 包装： | 标准包装 |
| 产品目录页面： | 1536 (CN2011-ZH PDF) |
| 其它名称： | 869-1141-6 |
Ordering number : ENA1084B
CPH6341
P-Channel Power MOSFET
–30V, –5A, 59m ? , Single CPH6
Features
http://onsemi.com
?
?
?
?
Low ON-resistance
High-speed switching
4V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--30
±20
--5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 M s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--20
1.6
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-003
? Package
? JEITA, JEDEC
: CPH6
: SC-74, SOT-26, SOT-457
? Minimum Packing Quantity : 3,000 pcs./reel
6
2.9
5
4
0.15
CPH6341-TL-E
CPH6341-TL-W
Packing Type: TL
Marking
0.05
1
2
0.95
3
0.4
1 : Drain
2 : Drain
TL
3 : Gate
4 : Source
5 : Drain
Electrical Connection
1, 2, 5, 6
6 : Drain
CPH6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
January, 2014
11614HK TC-00002818/61312 TKIM/30508PE TIIM No. A1084-1/6
相关PDF资料 |
PDF描述 |
|---|---|
| CPH6347-TL-H | MOSFET P-CH 20V 6A CPH6 |
| CPH6350-TL-E | MOSFET P-CH 30V 6A CPH6 |
| CPH6354-TL-H | MOSFET P-CH 60V 4A CPH6 |
| CPH6355-TL-H | MOSFET P-CH 30V 3A CPH6 |
| CPH6442-TL-E | MOSFET N-CH 60V 6A CPH6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CPH6341-TL-W | 制造商:ON Semiconductor 功能描述:PCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL - PCH 4V DRIVE SERIES |
| CPH6347 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device |
| CPH6347_11 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device |
| CPH6347_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH6347-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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