参数资料
型号: CY7C057V-15BBXC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
中文描述: 32K X 36 DUAL-PORT SRAM, 15 ns, PBGA172
封装: 15 X 15 MM, 1.25 MM HEIGHT, 1 MM PITCH, BGA-172
文件页数: 22/26页
文件大小: 713K
代理商: CY7C057V-15BBXC
CY7C056V
CY7C057V
Document #: 38-06055 Rev. *E
Page 5 of 26
Pin Configurations (continued)
Figure 2. 172-Ball Ball Grid Array (BGA)
Top View
1
2
3
4
56789
10
11
12
13
14
A
I/O32L
I/O30L
NC
VSS
I/O13L
VDD
I/O11L I/O11R
VDD
I/O13R
VSS
NC
I/O30R
I/O32R
B
A0L
I/O33L
I/O29
I/O17L
I/O14L I/O12L
I/O9L
I/O9R
I/O12R I/O14R I/O17R I/O29R I/O33R
A0R
C
NC
A1L
I/O31L
I/O27L
NC
I/O15L I/O10L I/O10R I/O15R
NC
I/O27R I/O31R
A1R
NC
D
A2L
A3L
I/O35L
I/O34L
I/O28L I/O16L
VSS
I/O16R I/O28R I/O34R I/O35R
A3R
A2R
E
A4L
A5L
NC
B0L
NC
BM
NC
A5R
A4R
F
VDD
A6L
A7L
B1L
NC
SIZE
A7R
A6R
VDD
G
OEL
B2L
B3L
CE0L
CE0R
BA
WA
OER
H
VSS
R/WLA8L
CE1L
CE1R
A8R
R/WRVSS
J
A9L
A10L
VSS
M/S
NC
VDD
A10R
A9R
K
A11L
A12L
NC
SEML
NC
SEMR
NC
A12R
A11R
L
BUSYL
A13L
INTL
I/O26L
I/O25L I/O19L
VSS
I/O19R I/O25R I/O26R
INTR
A13R
BUSYR
M
NC
NC[4]
I/O22L
I/O18L
NC
I/O7L
I/O2L
I/O2R
I/O7R
NC
I/O18R I/O22R
NC[5]
NC
N
I/O24L
I/O20L
I/O8L
I/O6L
I/O5L
I/O3L
I/O0L
I/O0R
I/O3R
I/O5R
I/O6R
I/O8R I/O20R
I/O24R
P
I/O23L
I/O21L
NC
VSS
I/O4L
VDD
I/O1L
I/O1R
VDD
I/O4R
VSS
NC
I/O21R
I/O23R
Selection Guide
CY7C056V
CY7C057V
-12
CY7C056V
CY7C057V
-15
Unit
Maximum access time
12
15
ns
Typical operating current
250
240
mA
Typical standby current for ISB1 (Both ports TTL level)
55
50
mA
Typical standby current for ISB3 (Both ports CMOS level)
10
A
10
A
相关PDF资料
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CY7C057V-15AXI 3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
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