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| 型号： | DMG1029SV-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 60V 480/320 SOT563 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 480mA，320mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.7 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 660mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 其它名称： | DMG1029SV-7DIDKR |
DMG1029SV
Electrical Characteristics N-CHANNEL – Q1 (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
60
—
—
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
—
—
—
—
10
±50
nA
nA
V DS =50V, V GS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS(ON)
|Y fs |
V SD
1.0
—
—
80
—
—
1.3
1.5
—
—
2.5
1.7
3
—
1.4
V
?
mS
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 500mA
V GS = 4.5V, I D = 200mA
V DS = 10V, I D = 200mA
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
30
4.2
2.9
0.3
0.2
0.08
3.9
3.4
15.7
9.9
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 30V, V GS = 10V,
R G = 25 ? , I D = 200mA
Electrical Characteristics P-CHANNEL – Q2 (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
-60
—
—
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
—
—
—
—
-25
±100
nA
nA
V DS = -50V, V GS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
-1
—
—
50
—
—
2.7
3.2
—
—
-3.0
4
6
—
-1.4
V
?
mS
V
V DS = V GS , I D = -250 μ A
V GS = -10V, I D = -500mA
V GS = -4.5V, I D = -200mA
V DS = -25V, I D = -100mA
V GS = 0V, I S = -115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
25
4.7
2.7
0.28
0.14
0.08
5.5
7.9
10.6
11.6
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = -25V, V GS = 0V,
f = 1.0MHz
V GS = -4.5V, V DS = -10V,
I D = -500mA
V DD = -30V, V GS = -10V,
R G = 50 ? , I D = -270mA
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMG1029SV
Document number: DS35421 Rev. 3 - 2
3 of 9
www.diodes.com
August 2013
? Diodes Incorporated
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