- 您现在的位置：买卖IC网 > Datasheet目录404 > DMG3414U-7 (Diodes Inc)MOSFET N-CH 20V 4.2A SOT23 Datasheet资料下载
参数资料
| 型号： | DMG3414U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 4.2A SOT23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 8.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 829.9pF @ 10V |
| 功率 - 最大： | 780mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG3414U-7DIDKR |
DMG3414U
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8
Units
V
V
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +70°C
I D
I DM
4.2
3.2
30
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
0.78
162
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
20
?
?
V
V GS = 0V, I D = 250μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = 25 ? C
I DSS
I GSS
?
?
?
?
1.0
±100
μA
nA
V DS = 20V, V GS = 0V
V GS = ? 8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.5
?
0.9
V
V DS = V GS , I D = 250μA
19
25
V GS = 4.5V, I D = 8.2A
Static Drain-Source On-Resistance
R DS (ON)
?
22
29
m ?
V GS = 2.5V, I D = 3.3A
28
37
V GS = 1.8V, I D = 2.0A
Forward Transfer Admittance
|Y fs |
?
7
?
S
V DS = 10V, I D = 4A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
829.9
85.3
81.2
9.6
1.5
3.5
8.1
8.3
40.1
9.6
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V
f = 1.0MHz
V GS = 4.5V, V DS = 10V, I D = 8.2A
V DD = 10V, V GS = 4.5V,
R L = 10 ? , R G = 6 ? , I D = 1A
Notes:
5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG3414U
Document number: DS31739 Rev. 4 - 2
2 of 6
www.diodes.com
September 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG3415U-7 | MOSFET P-CH 20V 4A SOT-23 |
| DMG3415UFY4-7 | MOSFET P-CH 16V 2.5A DFN-3 |
| DMG3420U-7 | MOSFET N-CH 20V 5.47A SOT23 |
| DMG4406LSS-13 | MOSFET N CH 30V 10.3A SO-8 |
| DMG4413LSS-13 | MOSFET P-CH 30V 10.5A SOP8L |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG3415U | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance |
| DMG3415U-13 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG3415U-7 | 功能描述:MOSFET P-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG3415U-7-CUT TAPE | 制造商:DIODES 功能描述:DMG3415U Series 20 V 39 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3 |
| DMG3415UFY4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
发布紧急采购，3分钟左右您将得到回复。