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参数资料
| 型号： | DMG4511SK4-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 35V TO252-4L |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 35V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.3A，5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 8mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 850pF @ 25V |
| 功率 - 最大： | 1.54W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | TO-252-4L |
| 包装： | 标准包装 |
| 其它名称： | DMG4511SK4-13DIDKR |
DMG4511SK4
Maximum Ratings – N-CHANNEL, Q1 @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
35
±20
Unit
V
V
Continuous Drain Current (Note 4) V GS = 10V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 5) V GS = 4.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
t ≤ 10s
Steady
State
t ≤ 10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I D
I DM
5.3
4.2
8.6
6.8
13
11
6.3
5.0
9.3
7.4
50
A
A
A
A
A
A
Maximum Ratings – P-CHANNEL, Q2 @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-35
±20
Unit
V
V
Continuous Drain Current (Note 4) V GS = -10V
Continuous Drain Current (Note 5) V GS = -10V
Continuous Drain Current (Note 5) V GS = -10V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -4.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
t ≤ 10s
Steady
State
t ≤ 10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I D
I DM
-5.0
-3.8
-7.8
-6.2
-12
-10
-6.5
-5.2
-9.6
-7.7
-50
A
A
A
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5)
Power Dissipation (Note 5) t ≤ 10s
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5) t ≤ 10s
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
Symbol
P D
R θ JA
P D
R θ JA
P D
R θ JA
T J , T STG
Value
1.54
81.3
4.1
30.8
8.9
14
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
2 of 9
www.diodes.com
July 2011
? Diodes Incorporated
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