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参数资料
| 型号： | DMG4511SK4-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 35V TO252-4L |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 35V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.3A，5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 8mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 850pF @ 25V |
| 功率 - 最大： | 1.54W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | TO-252-4L |
| 包装： | 标准包装 |
| 其它名称： | DMG4511SK4-13DIDKR |
DMG4511SK4
Electrical Characteristics – N-CHANNEL, Q1 @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
35
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 35V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
25
50
4.5
-
3.0
35
65
-
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 8A
V GS = 4.5V, I D = 6A
V DS = 10V, I D = 8A
V GS = 0V, I S = 8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 10V)
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
850
64.7
51.9
1.6
18.7
8.8
2.6
2.1
5.4
2.8
33.2
35.6
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 10V, V DS = 28V, I D = 8A
V GS = 4.5V, V DS = 28V,
I D = 8A
V DS = 18V, V GS = 10V,
R L = 18 ? , R G = 3.3 ? ,
I D = 1A
Electrical Characteristics – P-CHANNEL, Q2 @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-35
-
-
-
-
-
-
-1.0
±100
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -35V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
-1.0
-
-
-
30
40
8
-
-3.0
45
65
-
-1.2
V
m Ω
S
V
V DS = V GS , I D = -250 μ A
V GS = -10V, I D = -6A
V GS = -4.5V, I D = -4A
V DS = -10V, I D = -6A
V GS = 0V, I S = -6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = -10V)
Total Gate Charge (V GS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
985.2
90.6
75.3
7.0
19.2
9.5
2.0
3.5
5.2
4.8
45.8
29.5
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
ns
ns
ns
ns
V DS = -25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -10V, V DS = -28V, I D = -6A
V GS = -4.5V, V DS = -28V,
I D = -6A
V DS = -18V, V GS = -10V,
R L = 18 ? , R G = 3.3 ? ,
I D = -1A
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4511SK4
Document number: DS32042 Rev. 4 - 2
3 of 9
www.diodes.com
July 2011
? Diodes Incorporated
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