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| 型号： | DMN6068SE-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 4.1A SOT223 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 502pF @ 30V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | DMN6068SE-13DKR |
A Product Line of
Diodes Incorporated
DMN6068SE
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
60
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 6)
(Note 11)
(Note 11)
V GS
E AS
I AS
? 20
37.5
5.0
V
mJ
A
(Note 8)
5.6
Continuous Drain current
V GS = 10V
T A = +70°C (Note 8)
I D
4.5
A
(Note 7)
4.1
Pulsed Drain current
V GS = 10V
(Note 9)
I DM
20.8
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 8)
(Note 9)
I S
I SM
4.9
20.8
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 7)
(Note 8)
(Note 7)
(Note 8)
(Note 10)
P D
R θ JA
R θ JL
T J , T STG
2.0
16.0
3.7
29.5
62.5
34
11.5
-55 to +150
W
mW/°C
°C/W
°C
Notes:
6. AEC-Q101 V GS maximum is ? 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t ? 10 sec.
9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25 ? , V DD =50V, starting T J = +25°C.
DMN6068SE
Document Number DS32033 Rev. 4 - 2
2 of 9
www.diodes.com
September 2013
? Diodes Incorporated
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