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参数资料
| 型号： | DS1258W |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | DRAM |
| 英文描述： | 3.3V 128K x 16 Nonvolatile SRAM(3.3V 128K x 16 非易失性静态RAM) |
| 中文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 150 ns, PDIP40 |
| 封装： | 0.740 INCH, PLASTIC, DIP-40 |
| 文件页数： | 3/9页 |
| 文件大小： | 71K |
| 代理商： | DS1258W |
DS1258W
022598 3/9
DATA RETENTION MODE
The DS1258W provides full functional capability for V
CC
greater than 3.0 volts, and write protects by 2.8 volts.
Data is maintained in the absence of V
CC
without any
additional support circuitry. The nonvolatile static RAMs
constantly monitor V
CC
. Should the supply voltage
decay, the NV SRAMs automatically write protect them-
selves, all inputs become “don’t care,” and all outputs
become high impedance. As V
CC
falls below approxi-
mately 2.5 volts, a power switching circuit connects the
lithium energy source to RAM to retain data. During
power–up, when V
CC
rises above approximately
2.5 volts, the power switching circuit connects external
V
CC
to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after V
CC
exceeds
3.0 volts.
FRESHNESS SEAL
Each DS1258W device is shipped from Dallas Semi-
conductor with its lithium energy source disconnected,
guaranteeing full energy capacity. When V
CC
is first
applied at a level greater than 3.0 volts, the lithium ener-
gy source is enabled for battery backup operation.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1259 | Battery Manager Chip(电池管理芯片) |
| DS1260 | Smart Battery(智能电池) |
| DS1265AB | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
| DS1265Y | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
| DS1265Y | 8M Nonvolatile SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258W-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258W-100IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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